Abstract of Talk by Dr. Alfred Phillips

Field-Effect Transistor Theory

Professor Alfred Phillips
School of Electrical Engineering
Cornell University
Ithaca, NY

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We have created a two-postulate theory for field-effect transistors (FETs) that applies to metal-oxide-semiconductor FETs, junction FETs, metal-semiconductor FETs, and hetero-structure FETs. Although FETs are the most important electronic device fabricated in industry today, the mathematical model of FETs given in current texts is based on Shockley's forty year-old low drain voltage approximation. We will discuss the mathematics of our theory and compare its predictions with measurements.

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